High-Purity Indium Antimonide (InSb) Single Crystal Wafer English Product Description
High-Purity Indium Antimonide (InSb) Single Crystal Wafer | Intrinsic / Te-Doped N-Type / Ge-Doped P-Type | Single/Double Side Polished | <100>/<111> Crystal Orientation | Epitaxial Substrates for 3–5μm Mid-Wave Infrared Detectors | Ultra-High-Mobility Hall Sensors & Magnetoresistive Devices | High-Frequency & High-Speed Semiconductors | Custom Sizes for Scientific Research
1. Product Introduction
This high-purity Indium Antimonide (InSb) single crystal wafer is a core ultra-high-mobility narrow-bandgap III-V compound semiconductor material. High-integrity single crystal ingots are grown by advanced Liquid Encapsulated Czochralski (LEC) and Vertical Gradient Freeze (VGF) technologies. All products are precisely manufactured in a Class 100 dust-free workshop through precision slicing, uniform lapping and CMP chemical mechanical ultra-mirror polishing.
We strictly control crystal dislocation density, lattice uniformity, thickness tolerance and surface cleanliness. The wafers are free of edge chipping, surface scratches, lattice defects and residual stress, reaching EPI epitaxial-grade cleanliness standards. They can be directly applied to high-precision processes including MBE/MOCVD epitaxial growth, quantum well fabrication, precision photolithography, coating and etching.
InSb features ultra-high electron mobility and excellent infrared detection performance among commercial semiconductor materials. As a direct bandgap semiconductor with a narrow room-temperature bandgap of 0.17–0.18 eV, it perfectly matches the core 3–5 μm mid-wave infrared detection band and serves as the key photosensitive substrate for cooled infrared focal plane detectors.
Its room-temperature electron mobility reaches up to 78,000 cm²/(V·s), far exceeding silicon, GaAs, InAs and other conventional semiconductors. It possesses unique advantages such as minimal electron effective mass, ultra-fast carrier response, significant magnetoresistive effect and high sensitivity. Widely adopted in military infrared detection, aerospace optoelectronic systems, high-precision Hall sensors, magnetoresistive devices and ultra-high-speed & high-frequency microelectronic devices, it fully covers scenarios of university scientific research, enterprise process debugging, new product development and industrial mass production.
2. Core Material & Process Advantages
Growth Process: Adopting the mature and stable composite LEC & VGF growth technology, the single crystals feature ultra-low growth stress, excellent crystal integrity, low dislocation density and superior component uniformity. The process fundamentally reduces lattice distortion, stacking faults and impurity segregation, delivering stable lattice quality. It is highly compatible with the epitaxial growth of InSb-based multi-element alloys, superlattices and quantum wells, effectively improving the production yield and consistency of infrared detection chips and magnetoelectric devices.
Crystal Structure: It has a standard zinc blende cubic single crystal structure with a lattice constant of 6.48 Å and a dielectric constant of 17.7. Featuring stable crystal structure and excellent lattice matching capability, it adapts to various antimonide epitaxial systems and acts as a dedicated core substrate for high-performance mid-wave infrared detection arrays, quantum sensing and magnetoelectric coupling devices.
Core Performance: With industry-leading ultra-high carrier mobility and ultra-fast carrier response speed, it achieves extremely low high-frequency signal transmission loss, fully meeting the operating requirements of ultra-high-speed and ultra-high-frequency microelectronic devices. Its narrow-bandgap characteristic enables outstanding photosensitivity in the 3–5 μm mid-wave infrared range, providing ultra-high detection sensitivity and clear imaging quality under liquid nitrogen cooling.
It exhibits a prominent giant magnetoresistive effect with high-precision and high-sensitivity magnetoelectric conversion, making it the preferred material for high-precision magnetic sensing, current detection and magnetic field monitoring. In addition, it delivers good thermal stability, low device leakage and strong anti-interference performance, suitable for harsh working conditions of high-end precision equipment.
Precision Processing: All standardized production procedures are completed in a dust-free workshop, including precision slicing, uniform double-sided lapping and 0.3–0.5 mm precision arc edge protection chamfering to completely avoid edge chipping, cracking and powder falling. Equipped with advanced CMP ultra-mirror polishing technology, the wafers achieve nanometer-scale ultra-low surface roughness, excellent flatness and flawless surfaces without pits or scratches. The epitaxial-grade surface cleanliness fully satisfies the deep processing requirements of high-precision epitaxy, multi-layer thin film deposition, precision photolithography and etching.
3. Core Specification Parameters (Purchasing Guide)
3.1 Conductivity Type & Doping Characteristics (Full Range In Stock)
Intrinsic/Undoped InSb (High-Purity Research Grade): 6N ultra-high purity without doping, featuring uniform electrical properties, minimal crystal defects and ultra-low internal stress. Free of impurity level interference, it maintains pure and stable optoelectronic and magnetoelectric properties, suitable for cutting-edge scientific research including quantum physics research, infrared mechanism experiments, magnetoresistive effect development and high-precision optical detection.
N-Type InSb (Te-Tellurium Doped · Industrial Mainstream): With controllable carrier concentration, ultra-high mobility and stable high-frequency & magnetoelectric performance, it offers excellent device consistency and repeatability. It is the core mass-production substrate for ultra-high-speed high-frequency transistors, high-precision Hall sensors, magnetoresistive devices and infrared photoelectric detection arrays.
P-Type InSb (Ge-Germanium Doped): It features stable P-type conductivity and high PN junction fabrication precision with uniform photoelectric conversion performance. It is widely used in the R&D and fabrication of mid-wave infrared lasers, infrared detection chips, special optoelectronic coupling devices and new-type magnetoelectric devices.
3.2 Standard Crystal Orientation
In-stock mainstream orientations: <100>, <111>, with orientation accuracy of ±0.5°. Custom epitaxial offset angles of 2°/4°/6° are available, precisely adapting to precision epitaxial growth processes of superlattices, multi-quantum wells and heterojunctions to meet diverse device manufacturing requirements.
3.3 In-Stock Size Specifications (Square Chips & Round Wafers)
Square Single Crystal Chips (for Scientific Research & Process Debugging)
Sizes: 5×5mm, 10×10mm, 15×15mm, 20×20mm, 25×25mm
Thickness: 0.2mm, 0.35mm, 0.5mm, 1.0mm, 2.0mm, thickness tolerance ±20μm. Custom non-standard sizes and special-shaped cutting are supported.
Standard Round Wafers (for Industrial Mass Production & Epitaxial Processes)
Sizes: 2-inch (50.8mm), 3-inch, 4-inch (industrial mainstream)
Conventional thickness: 350μm, 500μm, 625μm, 650μm, 700μm. Excellent thickness uniformity ensures compatibility with fully automatic wafer processing equipment for cutting, coating, photolithography and epitaxial mass production.
3.4 Optional Surface Processes
Single-Side Polished (SSP): Ultra-mirror polished on a single side with finely lapped backside. Cost-effective with qualified surface cleanliness, ideal for research samples, basic performance testing, process debugging and experimental pre-treatment.
Double-Side Polished (DSP): Ultra-mirror polished on both sides with zero stress, zero defects, nanometer-scale ultra-low roughness and superior flatness, meeting EPI epitaxial-grade standards. It is the preferred choice for precision mass production of infrared detection chips, magnetoelectric devices and ultra-high-frequency microelectronic devices.
Lapped Blank Wafers: Double-sided frosted and unpolished, suitable for secondary cutting, custom grinding and low-cost process exploration, effectively reducing the cost of research samples.
Process Details: All products adopt unified precision arc chamfering to completely eliminate edge chipping, cracking and powder falling, adapting to precision equipment clamping, automatic processing and multi-layer epitaxial processes.
Tags: InSb Wafers