InP Mono-Crystal Wafers
￥1,200.00
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- Availability: In Stock
High-Purity Indium Phosphide Single Crystal Wafer Details
High-Purity Indium Phosphide (InP) Single Crystal Wafer | Fe-Doped Semi-Insulating / S-Doped N-Type / Zn-Doped P-Type | Single/Double Side Polished | <100>/<111> Crystal Orientation | Epitaxial Substrates for Optical Communication Lasers | Millimeter-Wave High-Frequency Devices | Custom Sizes Available for Scientific Research
1. Product Introduction
This Indium Phosphide (InP) single crystal wafer is fabricated via high-end Liquid Encapsulated Czochralski (LEC) technology for growing primary single crystal ingots. It undergoes precision wire cutting, ultra-precision lapping, and CMP chemical mechanical mirror polishing. All production procedures are completed in a dust-free workshop with strict control over crystal defects, thickness uniformity and surface cleanliness. As a core second-generation III-V group direct bandgap compound semiconductor material, InP serves as an essential substrate for high-end optical communication, ultra-high-frequency millimeter-wave and high-speed optoelectronic chips, delivering superior optoelectronic and high-frequency performance that cannot be matched by silicon and gallium arsenide materials.
Featuring an optimal luminous band for optical fiber communication, ultra-high electron mobility, high saturated drift velocity, excellent thermal conductivity and radiation resistance, InP is widely applied in 800G/1.6T high-speed optical modules, 5G/6G millimeter-wave radio frequency systems, AI high-speed interconnection and aerospace & military optoelectronic systems. Our products are classified into three grades: scientific research grade, industrial mass production grade and high-end epitaxial grade, fully meeting the needs of sample R&D, process commissioning and large-scale mass production.
2. Core Material & Process Advantages
Growth Process: Adopting the industry-standard Liquid Encapsulated Czochralski (LEC) method, the wafer features high crystal integrity, low dislocation density, excellent lattice uniformity and precise stress control, perfectly adapting to high-precision processes including epitaxial growth, thin film deposition and photolithography.
Crystal Structure: It has a standard zinc blende single crystal structure and is a direct bandgap semiconductor with a room-temperature band gap of 1.34 eV. It precisely matches the 1310nm/1550nm low-loss optical fiber communication windows with extremely high photoelectric conversion efficiency, making it the core substrate for optical communication light-emitting and detection devices.
Core Performance: The electron mobility reaches up to 5400cm²/(V·s), far exceeding that of silicon and gallium arsenide. It boasts fast saturated electron drift velocity and supports ultra-high-frequency operation above 100GHz. With good thermal conductivity, high temperature resistance, radiation resistance and ultra-low signal transmission loss, it is suitable for the working conditions of ultra-high-speed and ultra-high-frequency precision devices.
Processing Technology: Manufactured through precision slicing, uniform double-sided lapping, edge protection chamfering and CMP ultra-mirror polishing, the wafer surface is scratch-free, pit-free, flat and ultra-smooth with extremely low roughness, and can be directly used for precision processes such as epitaxy, coating, photolithography and etching.
3. Core Specification Parameters (Purchasing Guide)
3.1 Conductivity Type & Doping Characteristics (Full Range of Spot Goods)
Semi-Insulating InP (Fe Iron Doped · Mainstream Preference): Resistivity ≥ 10⁷ Ω·cm, with high resistance, low leakage and no parasitic interference, delivering excellent insulation performance. It is specially designed for millimeter-wave high-frequency devices, HEMT, HBT, radio frequency integrated circuits and satellite communication chips, serving as the core substrate for high-end radio frequency and optoelectronic mass production.
N-Type InP (S Sulfur Doped): With controllable resistivity, high carrier mobility and stable high-frequency characteristics, it is mainly used for high-speed photodetectors, photocathodes, high-frequency transistors and high-speed power devices.
P-Type InP (Zn Zinc Doped): It features stable P-type conductivity and adapts to high-precision PN junction fabrication, widely applied in laser diodes, infrared optoelectronic devices, optoelectronic integrated chips and high-efficiency stacked solar cell substrates.
Intrinsic/Undoped InP: Ultra-high purity without doping, with uniform electrical properties and minimal crystal defects, suitable for basic scientific research, special optical windows and high-precision detector R&D.
3.2 Standard Crystal Orientation
Available spot crystal orientations: <100>, <111>, with orientation accuracy of ±0.5°. Custom epitaxial offset angles of 2°/4°/6°/10° are supported to adapt to various InP, InGaAs and InAlAs epitaxial growth processes.
3.3 Standard Sizes (Square Chips & Round Wafers)
Square Single Crystal Chips (for Scientific Research & Process Commissioning)
Sizes: 5×5mm, 10×10mm, 15×15mm, 20×20mm, 25×25mm
Thickness: 0.2mm, 0.35mm, 0.5mm, 1.0mm, 2.0mm, with thickness tolerance of ±20μm
Standard Round Wafers (for Industrial Mass Production & Epitaxial Processes)
Sizes: 2-inch (50.8mm), 3-inch, 4-inch (industry mainstream)
Conventional thickness: 350μm, 500μm, 625μm, 650μm, 700μm, with excellent thickness uniformity, compatible with fully automatic wafer processing equipment.
3.4 Optional Surface Processes
Single-Side Polished (SSP): Ultra-mirror polished on single side and finely lapped on the back. Cost-effective, suitable for scientific research samples, process commissioning and basic performance testing.
Double-Side Polished (DSP): Ultra-mirror polished on both sides with ultra-low surface roughness, zero defects and no internal stress. It is the preferred choice for epitaxial growth, precision photolithography, vacuum coating and high-end optoelectronic device fabrication.
Lapped Blank Wafers: Double-sided frosted and unpolished, applicable for secondary cutting, custom grinding, low-cost process tests and pre-treatment experiments.
Detailed Process: All products adopt 0.3–0.5mm precision arc chamfering to avoid edge chipping, cracking and powder falling, ensuring compatibility with precision equipment clamping and deep processing.
Tags: InP Mono-Crystal Wafers