Germanium Mono-Crystal Wafers
￥5,000.00
- Product Code:
- Availability: In Stock
Single-crystal germanium ingots are fabricated via the Czochralski (CZ) pulling method or Vertical Gradient Freeze (VGF) technique, followed by wire saw cutting and precision grinding in compliance with national standard GB/T5238-2019. Available in three grades: optical grade, epitaxial semiconductor grade and ultra-high-purity detector grade. The silvery-gray crystalline germanium serves as a core substrate material for infrared optics, semiconductor chips, aerospace photovoltaics, optoelectronic detection and laboratory research.
Conductivity Type & Doping Specification
- Undoped high-resistivity Ge: Resistivity ρ＞35 Ω·cm, intrinsic germanium, preferred material for infrared optical applications.
- N-type Ge (antimony Sb-doped): Resistivity ranging from 0.01 to 40 Ω·cm, applied for high-speed devices and photocathodes.
- P-type Ge (gallium Ga-doped): Resistivity ranging from 0.005 to 35 Ω·cm, used for PN junctions and stacked solar cell substrates.
Standard Crystal Orientation
Available orientations: <100>, <111>, <110> with orientation tolerance ±0.5°; off-axis orientations of 4°, 6° or 9° are customizable upon request.
In-Stock Dimensions (Square Chips / Round Wafers available)
Square Pieces
Sizes: 5×5, 10×10, 15×15, 20×20, 25×25 mm; Thickness options: 0.3, 0.5, 1.0, 2.0 mm.
Round Wafers
1-inch, 2-inch (50.8 mm), 3-inch, 4-inch, 6